Ultra-wideband transmission filter based on guided-mode resonances in two terahertz metasurfaces.

This paper reports on a broadband transmission filter that employs the guided mode resonances pertaining to a terahertz metasurface composed of metallic gold disks with a quartz slab. Unlike structures involving conventional metasurfaces, two identical metasurfaces are placed on the upper and lower sides of a thick quartz slab. This structure can excite both even and odd guided mode resonances. The interaction of the two resonances at similar frequencies produces a broadband transmission peak. The sharp spectral feature of each resonance leads to the abrupt degradation of the transmission at the spectral edge, which can enable the development of the filter application. The proposed scheme can facilitate practical applications such as those of broadband filters at a terahertz frequency.

Self-rectifying resistance switching memory based on a dynamic p-n junction.

Although resistance random access memory (RRAM) is considered as one of the most promising next-generation memories, the sneak-path issue is still challenging for the realization of high-density crossbar memory array. The integration of the rectifying effect with resistance switching has been considered feasible to suppress the sneaking current. Herein, we report a self-rectifying resistance switching (SR-RS) by a newly discovered Li ions migration induced dynamic p-n junction at the Li-doped ZnO and ZnO layer interface. The Au/Li-ZnO/ZnO/Pt structure exhibits a forming-free and stable resistance switching with a high resistance ratio of R OFF/R ON âˆ¼ 104 and a large rectification ratio ∼106. In the Li-ZnO/ZnO bilayer, the electric field drives the dissociation and recombination of the self-compensated [Formula: see text] complex pairs ([Formula: see text] p-type substitutional defect; [Formula: see text] n-type interstitial defect) through the transport of [Formula: see text] between the two layers, thereby induces the formation of a dynamic p-n junction. Using this structure as a memory stacking device, the maximum crossbar array size has been calculated to be ∼16 Mbit in the worst-case scenario, which confirms the potential of the proposed device structure for the selection-device free and high-density resistance random access memory applications.

Self-Emitting Artificial Cilia Produced by Field Effect Spinning.

In nature, many cells possess cilia that provide them with motor or sensory functions, allowing organisms to adapt to their environment. The development of artificial cilia with identical or similar sensory functions will enable high-performance and flexible sensing. Here, we investigate a method of producing artificial cilia composed of various polymer materials, such as polyethylene terephthalate, polyurethane, poly(methyl methacrylate), polyvinylpyrrolidone, polystyrene, polyvinyl chloride, and poly (allylamine hydrochloride), using a field effect spinning (FES) method. Unlike wet- or electro-spinning, in which single or multiple strands of fibers are pulled without direction, the FES method can grow fiber arrays vertically and uniformly on a substrate in cilia-like patterns. The lengths and diameters of the vertically grown artificial cilia can be controlled by the precursor polymer concentration in the solution, applied electric current and voltage, and shape and size of the needle tip used for FES. The red, green, and blue emission characteristics of the polymer-quantum dot-based self-emitting artificial cilia prepared in polymer-inorganic nanoparticle hybrid form were determined. In addition, an artificial cilia-based humidity sensor made of the polymer-polymer composite was fabricated.

Magnetoresistance Versus Oxygen Deficiency in Epi-stabilized SrRu1 - x Fe x O3 - δ Thin Films.

Oxygen vacancies have a profound effect on the magnetic, electronic, and transport properties of transition metal oxide materials. Here, we studied the influence of oxygen vacancies on the magnetoresistance (MR) properties of SrRu1 - x Fe x O3 - δ epitaxial thin films (x = 0.10, 0.20, and 0.30). For this purpose, we synthesized highly strained epitaxial SrRu1 - x Fe x O3 - δ thin films with atomically flat surfaces containing different amounts of oxygen vacancies using pulsed laser deposition. Without an applied magnetic field, the films with x = 0.10 and 0.20 showed a metal-insulator transition, while the x = 0.30 thin film showed insulating behavior over the entire temperature range of 2-300 K. Both Fe doping and the concentration of oxygen vacancies had large effects on the negative MR contributions. For the low Fe doping case of x = 0.10, in which both films exhibited metallic behavior, MR was more prominent in the film with fewer oxygen vacancies or equivalently a more metallic film. For semiconducting films, higher MR was observed for more semiconducting films having more oxygen vacancies. A relatively large negative MR (~36.4%) was observed for the x = 0.30 thin film with a high concentration of oxygen vacancies (δ = 0.12). The obtained results were compared with MR studies for a polycrystal of (Sr1 - x La x )(Ru1 - x Fe x )O3. These results highlight the crucial role of oxygen stoichiometry in determining the magneto-transport properties in SrRu1 - x Fe x O3 - δ thin films.

Vitamin-Mineral Supplement Use Patterns in Elderly Koreans: Data from the 2007-2008 Korean National Health and Nutrition Examination Survey.

BACKGROUND: Vitamin-mineral supplements are the most popular dietary supplements in Korea. However, few studies have assessed the relationship between vitamin-mineral supplementation and associated factors among the Korean elderly. The purpose of this study was to assess the use of vitamin-mineral supplements among elderly in Korea as well as its association with sociodemographic factors, health-related behaviors, medical conditions, and nutrient intake. METHODS: This study was based on data from the Korean National Health and Nutrition Examination Survey, conducted by the Korean Ministry of Health and Welfare from 2008 to 2009. Data from 3,294 elderly men and women (65 years of age and older) were analyzed. Multivariable-weighted logistic regression model analysis was used to evaluate the association between vitamin-mineral supplement use and sociodemographic factors, health-related habits, and medical conditions. RESULTS: Vitamin-mineral supplementation was reported by 16.3% of the participants. The most common reason for using dietary supplements was recommendations from friends and acquaintances. Highly educated person, female participants had a greater likelihood of taking vitamin-mineral supplements. In addition, analysis of nutrient intake from food sources alone revealed a lower proportion of vitamin-mineral supplement users with nutrient intakes below the estimated average requirements for vitamin A, vitamin C, thiamine, riboflavin, niacin, calcium, iron, and phosphorus, compared to nonusers. However, vitamin-mineral supplementation was not associated with health-related behaviors or medical conditions. CONCLUSION: Highly educated person, elderly Korean women had a greater likelihood of using vitamin-mineral supplements. In addition, nutrient intakes from food sources alone were significantly higher among vitamin-mineral supplement users. Finally, vitamin-mineral supplementation may be an indicator of healthier diet in elderly Koreans.

Regulation of the forming process and the set voltage distribution of unipolar resistance switching in spin-coated CoFe2O4 thin films.

We report the preparation of (111) preferentially oriented CoFe2O4 thin films on Pt(111)/TiO2/SiO2/Si substrates using a spin-coating process. The post-annealing conditions and film thickness were varied for cobalt ferrite (CFO) thin films, and Pt/CFO/Pt structures were prepared to investigate the resistance switching behaviors. Our results showed that resistance switching without a forming process is preferred to obtain less fluctuation in the set voltage, which can be regulated directly from the preparation conditions of the CFO thin films. Therefore, instead of thicker film, CFO thin films deposited by two times spin-coating with a thickness about 100 nm gave stable resistance switching with the most stable set voltage. Since the forming process and the large variation in set voltage have been considered as serious obstacles for the practical application of resistance switching for non-volatile memory devices, our results could provide meaningful insights in improving the performance of ferrite material-based resistance switching memory devices.

Magnetic and electric properties of stoichiometric BiMnO3 thin films.

It has been suggested that BiMnO3 is a material exhibiting both ferromagnetism and ferroelectricity. Stoichiometry is rather easily achieved in a polycrystalline sample, and ferromagnetic properties have been well documented for bulk samples. Stoichiometry in thin films has been difficult to obtain, and many physical properties have exhibit wide distributions mainly due to the stoichiometry problem. Thin film studies on BiMnO3 have not shown clear evidence of ferroelectricity, while other physical properties measured for the BiMnO3 films showed wide spectra, which has been attributed to cation and/or oxygen vacancies. We fabricated BiMnO3 thin films with good stoichiometry and with ferromagnetic properties comparable to those reported for stoichiometric BiMnO3: Tc ~ 105 K and M sat ~ 3.6 µB/Mn. The charge-electric field (Q-E) curve measured at 5 K was fairly linear and free from hysteresis and showed no ferroelectric order. This finding is consistent with the centrosymmetric crystal structure recently suggested by theoretical calculations and structural studies on ceramic samples of stoichiometric BiMnO3.

Tunable blue-green-emitting wurtzite ZnS:Mg nanosheet-assembled hierarchical spheres for near-UV white LEDs.

Mg-doped ZnS hierarchical spheres have been synthesized via hydrothermal method using mixed solvents of ethylenediamine and DI water without any surface-active agent. The surface morphology and microstructure studies revealed that the hierarchical spheres were consisted of many well-aligned nanosheets with width 10 nm and length about 50 ~ 100 nm. X-Ray diffraction results show that the ZnS:Mg hierarchical spheres have wurtzite structure with high crystallinity. The absorption edge in the diffuse reflection spectra shifts towards lower wavelength with increasing Mg concentration, indicating an expansion in the bandgap energy that is estimated to be in the range of 3.28 to 3.47 eV. Blue-green photoluminescence with tunable intensity and peak position was observed depending on the Mg content. The Mg2+-activated ZnS phosphor can be good candidates for blue-green components in near-UV white light-emitting diodes.

Brush-shaped ZnO heteronanorods synthesized using thermal-assisted pulsed laser deposition.

Brush-shaped ZnO heteronanostructures were synthesized using a newly designed thermal-assisted pulsed laser deposition (T-PLD) system that combines the advantages of pulsed laser deposition (PLD) and a hot furnace system. Branched ZnO nanostructures were successfully grown onto CVD-grown backbone nanowires by T-PLD. Although ZnO growth at 300 °C resulted in core-shell structures, brush-shaped hierarchical nanostructures were formed at 500-600 °C. Materials properties were studied via photoluminescence (PL), scanning electron microscopy (SEM) and transmission electron microscopy (TEM) characterizations. The enhanced photocurrent of a SnO(2)-ZnO heterostructures device by irradiation with 365 nm wavelength ultraviolet (UV) light was also investigated by the current-voltage characteristics.